STMicroelectronics’ STGAP2SiCSN single-channel gate driver, optimized to control silicon-carbide MOSFETs, comes in a space-saving narrow-body SO-8 package and delivers robust performance with accurate PWM control. As SiC technology becomes widely adopted to boost power-conversion efficiency, the STGAP2SiCSN simplifies design, saves space, and enhances robustness and reliability in energy-conscious power systems, drives, and controls. Applications include electric-vehicle charging […]
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