The 1.2 kV SiC MOSFETs improve efficiency, performance, and make it easier to upgrade systems without redesigning, boosting power and reducing resistance. NoMIS Power has announced a major improvement in its 1.2 kV planar SiC MOSFET platform. By refining device design and process steps, it has significantly reduced on-resistance, making it easier to integrate SiC […]
View more at https://www.electronicsforu.com/news/improved-1-2-kv-sic-mosfets-boost-efficiency.
Credit- EFY. Distributed by Department of EEE, ADBU: https://tinyurl.com/eee-adbu
Curated by Jesif Ahmed
