Built on surface emitter technology, the high-speed device features a temperature coefficient of VF at -1.0 mV/K. Vishay Intertechnology, Inc. has expanded its optoelectronics product line by introducing a new 890 nm high-speed infrared (IR) emitting diode, the Vishay Semiconductors TSHF5211. This component is encased in a clear, untinted leaded plastic package, ensuring durability and […]
View more at https://www.electronicsforu.com/news/high-speed-ir-emitting-diode-with-enhanced-performance-and-reliability.
Credit- EFY. Distributed by Department of EEE, ADBU: https://tinyurl.com/eee-adbu
Curated by Jesif Ahmed
