Infineon presents its new generation of 1200 V CoolSiC MOSFETs in TO263-7 for automotive applications. The automotive- graded silicon carbide (SiC) MOSFET generation offers high power density and efficiency, enables bi-directional charging and significantly reduces system cost in on-board charging (OBC) and DC-DC applications. The 1200 V CoolSiC family member offers best-in-class switching performance through […]
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View more at https://www.electronicsforu.com/press-releases/next-generation-1200-v-coolsic-trench-mosfet-in-to263-7-package-boosts-e-mobility.
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Curated by Jesif Ahmed
