The enhancement mode (e-mode) Gallium Nitride Field Effect Transistors (GaN FETs) claims to be highly efficient and small in size, suitable for low and high-voltage applications. Nexperia has launched Gallium Nitride Field Effect Transistors (GaN FETs) in enhancement mode (e-mode), which the company claims are suitable for low voltage applications ranging from 100 to 150V […]
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