The STGAP2HD for IGBTs and STGAP2SICD for SiC MOSFETs leverage ST’s latest galvanic-isolation technology to provide 6kV transient-voltage capability in a SO-36W wide-body package. In addition, ±100V/ns dv/dt transient immunity prevents spurious turn-on in electrically noisy operating conditions. The devices can deliver a powerful gate-control signal of up to 4A, with dual output pins for extra flexibility in gate […]
The post Dual Gate Drivers Optimize and Simplify SiC, IGBT Switching Circuits appeared first on Electronics For You.
View more at https://www.electronicsforu.com/press-releases/dual-gate-drivers-optimize-and-simplify-sic-igbt-switching-circuits.
Credit- EFY. Published by Department of EEE, ADBU: tinyurl.com/eee-adbu
