Researchers have bonded gallium nitride to a diamond substrate to realize high-performance power semiconductors. One of the things that is hampering the progress of more powerful electronic devices is relatively low conductivity of semiconductor materials that can withstand harsh, high temperature fabrication processes of high-powered devices. Wide-bandgap materials such as Gallium nitride (GaN)-on-diamond show promise […]
The post Combining The Speed Of GaN And Thermal Conductivity Of Diamond appeared first on Electronics For You.
View more at https://www.electronicsforu.com/tech-zone/power-electronics-tech-zone/combining-the-speed-of-gan-and-thermal-conductivity-of-diamond.
Credit- EFY. Published by Department of EEE, ADBU: tinyurl.com/eee-adbu
