What is ATMega Microcontrollers & How to Make an LED Project with it?

What is Atmega Atmel AVR Microcontrollers ?

Introduction to ATMega Microcontrollers

ATMega Microcontrollers belong to the AVR family of microcontrollers and is manufactured by Atmel Corporation. An ATMega Microcontroller is an 8-bit microcontroller with Reduced Instruction Set (RISC) based Harvard Architecture.What is ATMega Atmel AVR Microcontrollers and how to make a simple electronic project with it

God to know:

As the name suggest, for instance, “ATmega16″ ,  where AT = Atmel, mega = mega AVR and 16= 16kb flash memory.

It has standard features like on-chip ROM (Read Only Memory), Data RAM (Random Access Memory), data EEPROM (Electrical Erasable Programmable Read Only Memory), Timers and Input / Output Ports, along with extra peripherals like Analog to Digital Converters (ADC), Serial Interface Ports etc. They have 120 and more instruction set and program memory ranges from 4K to 256K Bytes.

History of ATMega Microcontrollers

The ATMega microcontrollers were designed by two Norwegian Institute of Technology (NTH) students – Alf-Eigel Bogen and Vegard Wollan. It was later bought and developed by Atmel Corporation in 1996.

Architecture of ATMega Microcontrollers

As mentioned in the introduction part, ATMega microcontrollers are based on Harvard architecture, i.e. separate data memory and program memory. The Program memory also known as Program or Code Memory is the Flash Random Access Memory (ROM). The size of program memory ranges from 8K to 128K Bytes.

The data memory is divided to three parts – 32 General Purpose Registers, Input/output memory and Internal Static Random Access Memory (SRAM). while the size of General Purpose Registers is fixed, the I/O Memory and internal SRAM size varies from chip to chip.

Block Diagram of ATMEGA Microcontroller

The below diagram represents the architecture of ATMega microcontrollers.

Click image to enlarge

ATMega Microcontrollers - ATMega16 Block Diagram

Pinouts & Modules of ATMega microcontroller

Click  image to enlarge

Pinouts & Modules of ATMega microcontrollerLet us have a brief overview about each and every module

1. General Purpose Registers: The ATMega microcontrollers have register based architecture, i.e. both the operands and the result of operations is stored in the registers, collocated with the Central Processing Unit (CPU). The general purpose registers are coupled to the processor’s Arithmetic Logic Unit (ALU).

These registers are used to store information temporarily while executing a program. These consume 32 Bytes of Data Memory space and takes the address location – $00 to $FF. These registers are nomenclature as R0 to R31 and are each 8-bit wide.

2. Input / Output Memory: This is also referred to as Special Function Register (SFR) memory as it is dedicated to special functions like status registers, timers, serial communications, I/O ports, Analog to Digital Counters (ADC), etc.

The number of locations occupied by this memory depends on the number of pins and peripheral functions supported by the chip. While 64 Bytes of I/O location is fixed for all chips, some ATMega microcontrollers have an extended I/O memory which contains registers related to the extra ports and peripherals.

3. Internal SRAM: This is also referred to as scratch pad and is used to store data and parameters by programmers and compilers. Each location is accessible directly by its address. This is used to store data from Input / Output and serial ports into the CPU.

4. Flash Electrically Erasable Programmable Memory (Flash EEPROM): This is an in-system programmable memory used to store the programs. It is erasable and programmable as a single unit. Since it is non-volatile, memory content is retained even in case of power off. For each ATMega microcontroller, the number at the end of the name denotes the capacity of flash memory.

For example, for ATMega16, the flash memory capacity is 16K Bytes. An advantage of flash memory in ATMega microcontrollers is its in-system programmability, i.e. the microcontroller can be programmed even while being on the circuit board.

5. Data Electrically Erasable Programmable Memory (Data EEPROM): Some This memory is used to store and recall permanent program data and other system parameters.

Apart from the memory module, the microcontroller external connections for power supplies, two external crystal input pins, processor reset and four 8-bit ports.

1. Ports: The ATMega microcontrollers contain four 8 bit ports – Port A, Port B, Port C and Port D. Each port is associated with three registers – Data Register (writes output data to port), Data Direction Register (sets a specific port pin as output or input) and Input Pin Address (reads input data from port).

2. Clock: Microcontroller clock is used to provide time base to the peripheral sub systems. We can set clock internally by using the user-selectable Resistor Capacitor or externally using oscillators.

3. Timers and Counters: ATMega microcontrollers generally contain 3 timers/counters. While two 8-bit timers can also be used as counters, the third one is a 16-bit counter. These are used to generate precision output signals, count external events or measure parameters of input digital signal.

3. Serial Communication Systems: ATMega microcontroller chip contains in-built Universal Synchronous and Asynchronous Serial Receiver and Transmitter (USART), Serial Peripheral Interface (SPI) and Two Wire Serial Interface (TWI).

4. Analog to Digital Converters: ATMega microcontrollers contain multi-channel Analog to Digital Converter (ADC) subsystem.The ADC has 10-bit resolution and works on the principle of successive approximation. It is associated with three registers –ADC Multiplexer Selection Register, ADC Control and Status Register, and ADC Data Register.

5. Interrupts: There are 21 interrupt peripherals in ATMega microcontrollers. While 3 are used for external sources, remaining 19 are used for internal sub-systems. These are used to interrupt normal sequence of events in case of high priority emergencies.

Programming in ATMega Microcontrollers

As mentioned earlier, ATMega microcontroller is based on RISC architecture, i.e. it contains reduced set of instructions. Similar to other microcontrollers, programming in ATMega microcontrollers can also be done in both low level languages (assembly) or high level languages (Embedded C).

Let us have a brief discussion about assembly level programming.

An assembly language instruction consists of the following fields:

[Label: ] mnemonic [operands] [; comments]

Here mnemonic refers to the instruction. ATMega microcontrollers support both immediate as well as indirect addressing modes. The I/O registers can be accessed through their respective locations in the memory space.

Operands refer to the arguments operated on by the instruction. For ATMega microcontrollers, the operands are the general purpose registers or the I/O registers.

Generally programming is done using C language owing to the simplicity. Given below is a small example of programming ATMega16 microcontroller using C language

Circuit Diagram of Simple LED Project with ATmega16 Microcontroller

Purpose: To switch on LED using push button switch with ATmega16 Microcontroller

To switch on LED using push button switch with ATmega Atmel AVRProject Code:

intmain(void)

{

DDRA=0x00;

       DDRB=0xFF;

       unsignedinti;

while(1)

{

              i=PINA;

       if(i==1)

              {

                     PORTB=0xFF;

                    

              }

              else

              PORTB=0x00;

}

}

In the above code, I have assigned Port A as input port, of which Pin PA.0 is connected to a push-button switch. Port B is assigned output port, of which Pin PB.0 is connected to LED.

I have written and compiled the code using Atmel Studio 7, which converts the .c file to binary ELF object file. It is then again converted to hex file, which is passed to the microcontroller using AVRdude program.

This is a brief information about ATMega microcontrollers. Any other related information is welcome in the comments below.

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January 23, 2018 at 07:11AM by Department of EEE, ADBU: http://ift.tt/2AyIRVT

What is Raspberry Pi? Creating Projects using Raspberry Pi

What is Raspberry Pi?

Using Raspberry Pi to control LEDs (Simple Electronic Project)

What is Raspberry Pi?

Raspberry Pi is a small credit card sized microcomputer consisting of inbuilt features like SD card slot, wireless LAN and Bluetooth and 1.2GHZ ARM processor etc (More components details are given below). It can be used by enthusiasts to build small practical projects. It was first developed by Raspberry Pi Foundation in 2012. lets discuss the Raspberry in details and try to make a simple electronic project with it (Step by step tutorial with code).Raspberry Pi 3 Board

Construction of Raspberry Pi

Following components are available in a Raspberry Pi board

  1. General Purpose Input/output Pins for connection to external hardware and other electronics project.
  2. A micro USB port to insert a USB cable for powering.
  3. USB Ports for connection with keyboards, Mouse, Webcams etc.
  4. A micro SD card slot to insert a SD card, to load the operating system ‘Raspbian’.
  5. A HDMI socket for connection with a computer monitor or a television.

Different versions include Raspberry Pi Model A, Raspberry Pi Model B, Raspberry Pi Model B+, Raspberry Pi Model B+ Version2 and the Raspberry Pi3 ( The latest version supporting 1.2GHz ARM CPU, Bluetooth 4.1, Wi-Fi, 1 GB RAM etc).

Basic circuit components and parts of Raspberry Pi 3 Model B

Click image to enlargeBasic circuit & components parts of Raspberry Pi Model B

Fig – Raspberry Pi 3 Model B

Difference between Raspberry Pi B and Raspberry Pi B+

Click image to enlarge

Difference between Raspberry Pi B and Raspberry Pi B+

Fig: Difference between Raspberry Pi B and Raspberry Pi B+

Creating Projects using Raspberry Pi

Essential elements for beginners, to create a project using Raspberry Pi, are a keyboard, mouse, operating system, a smart phone charger, a display and a HDMI cable.

The SD card acts as a hard drive and can be used to install the operating system to store all the documents, code etc. Popular brands are Samsung Evo and SanDisk Extreme.

The first task involves loading the operating system onto the SD card. Though officially ‘Raspbian’ operating system is used, other operating systems like Windows 10 IoT core and Ubuntu Mate can also be used.Raspbian Graphical User Interface

Raspbian is a Linux based, open source operating system, allowing user to view and modify the source code. It can be either installed using New Out of Box Software (NOOBS) approach or copy an image file of the whole operating system directly onto the SD card.

The SD card is first connected to Windows (or other OS) through a card reader or adapter. The card is then formatted using SD Card Formatter (using Windows FAT32 formatter).

The NOOBS file is next downloaded from the site: magpi.cc/2bnf5XF. The files are extracted from the downloaded zip folder and are copied to the roots of the SD card. Once the NOOBS is copied to the SD card, the latter is ejected from the computer and re-slotted to the Raspberry Pi board.

The board is then connected to the monitor through a HDMI cable, powered up using USB adapter, and connected to external peripherals like keyboard and mouse. Once powered up, the board will boot itself and display the NOOBS installer. The Operating System will be installed once the user confirms the same.

Once installed, the Raspbian operating system consists of Lightweight X11 Desktop Environment (LXDE) which enables a user to use the Raspberry Pi same as the computer. It consists of a Menu button, which enables access to several programs and apps. It supports web browser called ‘Epiphany’ and an email program called ‘Claws Mail’. It can be connected to internet using Ethernet or Wi-Fi.

The settings can be adjusted either using the desktop interface or a terminal program called ‘Raspi Config’.  Similar to Microsoft Office in Windows, the Raspbian operating system consists of LibreOffice system with programs like Writer (Word), Calc (Excel Spreadsheets), Impress (Presentations), Draw (Vector Graphics and Flowcharts), Base (Database) and Math (Formula Editing).

General Purpose Input/Output Pins

The Raspberry Pi consists of 40 General-Purpose Input/Output Pins (right one in the fig below) which acts as interface between the board and external electronic components (LEDs, Relays, Motors etc) or projects (Arduino). These components need to be connected to the GPIO pins and are controlled using corresponding Python programming.

The GPIO pins also enable connection to Sensors and other peripherals through different communication techniques like I2C (Inter-Integrated Circuit), SPI (Serial Peripheral Interface) and UART (Universal Asynchronous Receiver Transmitter).

Click image to enlargeDifference between Raspberry Pi B and Raspberry Pi B+

Fig – Basic Components Diagram of Raspberry Pi

These pins also allow connection to in-built Hardware attachments (known as Hardware Attached on Top), which work as soon as they are connected to Raspberry Pi.

However, it should be noted that randomly connecting GPIO pins to high power devices, like Motors, would be unsafe on a breadboard and a better option is to use a ‘Breakout’ cable between a Breadboard and the Pi board.

These pins generally act as Input or Output pins. While acting as Output pins they can either have HIGH or LOW states, as Input pins they can either be pull-up or pull-down connections.

Programming using Raspberry Pi

The primary programming language used with Raspberry Pi is Python, a dynamic programming language used in variety of applications and similar to TCL, Pearl, Ruby or Java. The syntax is simple and uses standard English keywords.

A Python program can be written using IDLE, a development environment. It provides a Read-Evaluate-Print-Loop (REPL) prompt to enter Python commands. It can also be written using Leafpad Text editor.

Using Raspberry Pi to control LEDs (Simple Electronic Project)

LED Lights with Raspberry Pi

  1. Also Read: An Overview of Energy Conservation in Buildings

Step 1: The first step involves the hardware connection, i.e. connecting the cathode of both LEDs to two GPIO pins and the push button switch to another GPIO pin.

Step2: Next step involves importing the library files and writing the code

In the linux command terminal, write the below code

Sudo apt-get install RPi.GPIO.

Step 3: Next step is opening the IDLE program and write the below code

Import Rpi.GPIO as GPIO

Import time

GPIO.setmode (GPIO.BCM)

Green_LED = 17

Red_LED = 27

Button = 18

GPIO.cleanup ()

GPIO.setup (Green_LED, GPIO.output)

GPIO.setup (Red_LED, GPIO.output)

GPIO.setup (Button, GPIO.IN, pull_up_down = GPIO.PUD_DOWN)

Input_state = GPIO.input (Button)

If Input_state = = True:

            Print (‘Green LED On’)

            GPIO.output (Green_LED, GPIO.HIGH)

            time.sleep (0.2)

Else

         Print (‘Red LED On’)

         GPIO.output (Red_LED, GPIO.LOW)

          time.sleep (0.2)

Let us have a brief discussion about the above code.

1. The first two lines of the codes import the necessary library files and the timer related file.

2. The third line represents assigning the GPIO pin numbering. Note that there can be two modes to do the same – using the Broadcom SoC numbering (BCM) or BOARD mode. While the latter uses the same numbering sequence as the board, the former uses different ways.

3. The next three lines represent giving different names to the GPIO pins to be used.

4. The 7th Line involves calling the cleanup () function to make sure all the input/output channels are free to use.

5. The next two lines involve setting up of the LED connected pins as output pins.

6. The next line involves setting up of Push Button connected pin as input pin. Notice the argument ‘pull_up_down = GPIO.PUD_DOWN). As mentioned above, GPIO pins can be used as input through either pull up or pull down connection.

Reason is, each GPIO has software configurable resistors which can be used in pull up or pull down mode. Omitting this argument in the function would keep the input pin floating. So, the written command would enable the pull down resistor and once the Push Button is pressed, ‘True’ will be returned.

7. In the next set of lines, controlling of LEDs is mentioned, wherein once the Push Button is pressed, Green LED will be On and when not pressed, Red LED will be On.

Notice that unlike in other programming languages like C, Java, we have not used parenthesis or brackets to differentiate loops, instead here indentation is used.

Step 4: The next step involves saving the file and pressing ‘Run’ or ‘F5’ to run the code.

This is a small basic overview about Raspberry Pi. Though this board is similar in functionality to Arduino, yet Arduino is preferred for simpler projects compared to Raspberry Pi. The reason, readers are welcome to mention in the below section.

You may also read:

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January 21, 2018 at 02:58AM by Department of EEE, ADBU: http://ift.tt/2AyIRVT

What is GSM and How does it Work?

What is GSM (Global System for Mobile communication)

Introduction to GSM Technologies

GSM or Global System for Mobile Communications is the most popular wireless cellular communication technique, used for public communication. The GSM standard was developed for setting protocols for second generation (2G) digital cellular networks.

It initially started as a circuit switching network, but later packet switching was implemented after integration General Packet Radio Service (GPRS) technology as well. The widely-used GSM frequency bands are 900 MHz and 1800 MHz.

In the Europe and Asia, the GSM operates in 900 to 1800 MHz frequency range, whereas in United States and other American countries, it operates in the 850 to 1900 MHz frequency range. It uses the digital air interface wherein the analog signals are converted to digital signals before transmission. The transmission speed is 270 Kbps.

Global System for Mobile Communications (GSM) is currently used by about 80% of mobile phones across the worlds. There are about more than three billion users of this technology.

GSM History

The standard GSM was first developed in 1982 by a committee of Conference Europeenne des Postes et Telecommunications (CEPT) (Recent – European Telecommunications Standard Institute), the European Standard Organization, as a new mobile communications standard in the 900 MHz frequency band.

The main goal was to provide a uniform international standard for wireless mobile communications. The first GSM based mobile services were started in 1991 in Finland and the acronym changed to Global System for Mobile Communications. At the same time the first digital cellular system was formed which was based on GSM recommendations and later known as GSM-1800.

GSM Architecture

The GSM architecture is divided into Radio Subsystem, Network and Switching Subsystem and the Operation Subsystem. The radio sub system consists of the Mobile Station and Base Station Subsystem.

The mobile station is generally the mobile phone which consists of a transceiver, display and a processor. Each handheld or portable mobile station consists of a unique identity stored in a module known as SIM (Subscriber Identity Chip). It is a small microchip which is inserted in the mobile phone and contains the database regarding the mobile station.

GSM network architecture

Fig – GSM Network architecture

The base station subsystem

It connects the mobile station with the network subsystem via the air interface.

It consists of the below given elements:

Base Transceiver Station: One or more Base Transceiver Station provides physical connection of a mobile station to the network in form of air interface. Depending on load, subscriber behavior and morph structure, it can have different configurations – Standard configuration (Each BTS is assigned a different cell identity (CI) and several BTS forms a location area).

Umbrella Cell configuration (One BTS with high transmission power installed at a higher altitude, acting as an umbrella to the lower transmission power Base Transmitter Stations), Collocated configurations (several BTSs collocated at one site, but antennas cover only area of 120 or 180 degrees). It is a network of neighboring radio cells which provide a complete coverage of the service area.

Base Station Controller: It controls operation of one more Base Transceiver Stations, basically the handover or power control. A BSC connects to the BTS over a Abis-interface. It consists of a database comprising the whole maintenance status of the BTS, quality of radio and terrestrial resources and BTS operations software).

Transcoding Rate and Adaption Unit: It is located between a Base Station Controller and a Mobile Switching Centre. It compresses or decompresses speech from the mobile station. However, it is not used for data connections.

Network Switching Subsystem: It provides the complete set of control and database functions needed to set up a call using encryption, authentication and roaming features. It basically provides network connection to the Mobile Station. It consists of the below given elements

Mobile Switching Centre: It is the main element within the overall GSM network. It is like a Public Switched Telephone Network (PSTN) exchange or Integrated Services Digital Network (ISDN) exchange. Apart from the normal functionary, it supports additional functionality like registration, authentication, call location and call routing to the subscriber.

It provides interfaces to Public Switched Telephone Network (PSTN) for connection with landline or interface to another Mobile Switching Centre (MSC) for connection to another mobile phone.

Home Location Register: It is a repository which stores data belonging to large number of subscribers. It is basically a large database which administers data of each subscriber. For security purposes, it maintains subscriber specific parameter such as parameter Ki, known only to the HLR and the SIM.

Virtual Location Register: It is similar to Home Location Register (HLR) , but differs in the fact that it stores dynamic information regarding the subscriber data. It comes to act in case of roaming where a subscriber moves from one location to another. The information is stored in the Equipment Identity Register that maintains account of all mobile stations, each identified by their International Mobile Equipment Identity (IMEI) number.

How GSM communication works?

Global System for Mobile Communications (GSM) uses a combination of Time Division Multiple Access (TDMA) and Frequency Division Multiple Access (FDMA).

Frequency Division Multiple Access: It involves dividing a frequency band into multiple bands such that each sub-divided frequency band is allotted to a single subscriber. FDMA in GSM divides the 25MHz bandwidth into 124 carrier frequencies each spaced 200 KHz apart. Each base station is allotted one or more carrier frequencies.

Time Division Multiple Access: It involves allotting same frequency channel to different subscribers by dividing the frequency band into multiple time slots. Each user gets his/her own timeslot, allowing multiple stations to share same transmission space.

For GSM, each sub divided carrier frequency is divided into different time slots using TDMA technique.  Each TDMA frame lasts for 4.164 milliseconds (ms) and contains 8 time slots. Each time slot or a physical channel within this frame lasts for 577 microseconds and data is transmitted in the time slot in form of bursts.

GMS Modem Circuit – Working of GSM Module:

GMS-Modem-Circuit-How GSM communication works

 Fig -GMS Modem Circuit – How GSM communication works

Evolving Technologies

Although GSM or 2G communication network is still the preferred network for many subscribers, especially in developing countries like India, owing to its availability and it being economic, yet different communication technologies like Universal Mobile Telecommunications System (UMTS) and Long Term Evolution (LTE) technologies were developed. While UMTS provides 3rd generation wireless communication standards, LTE provides 4th generation wireless communication standards.

So, this is a basic tutorial about GSM communication network. In the last para, I have mentioned about the emerging communication network, LTE. Any information regarding this technique is welcome in the below comments.

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January 19, 2018 at 03:17AM by Department of EEE, ADBU: http://ift.tt/2AyIRVT

Neutral Point Treatment in Three-Phase Networks (Detailed Overview and Comparison)

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Credit- Electrical Engineering Portal. Published by Department of EEE, ADBU: tinyurl.com/eee-adbu

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Credit- Electrical Engineering Portal. Published by Department of EEE, ADBU: tinyurl.com/eee-adbu

CAPACITOR BANKS – CHARACTERISTICS AND APPLICATIONS

INTRODUCTION TO CAPACITOR BANKS, ITS CHARACTERISTICS AND APPLICATIONS

By: Manuel Bolotinha

DEFINITION OF AND CHARACTERISTICS OF CAPACITORS

A capacitor, also known as “condenser” is an electrical element with two electrical conductors separated by an insulator material (dielectric), as shown in Figure 1.

 Simplified scheme of a capacitor

Figure 1 – Simplified scheme of a capacitor

The electric parameter that defines a capacitor is the “capacitance” (symbol: C) and the unit, according to International System of Units (SI), is “farad” (symbol: F).

The most common used dielectrics are:

  • Ceramics
  • Plastic films
  • Oxide layer on metal (Aluminum; Tantalum; Niobium)
  • Mica, glass, paper, air and other similar natural materials
  • Vacuum

USE OF CAPACITORS AND CAPACITOR BANKS

In power electric systems capacitors and capacitors banks, which must be in accordance with IEC[1] Standards 60143 and 60871 or IEEE[2] Standard 824, are used to:

  • Compensate reactive energy (power factor correction) due to consumers (MV and LV) and the inductive effect of long overhead lines and underground cables (MV and MV).
  • Provide voltage regulation (HV[3]).
  • Start of single phase squirrel cage motors (LV).

A shunt capacitor bank (or simply capacitor bank) is a set of capacitor units, arranged in parallel/series association within a steel enclosure.

Usually fuses are used to protect capacitor units and they may be located inside the capacitor unit, on each element, or outside the unit.

Capacitor banks may be star or delta connected. Delta-connected banks are generally used only in MV distribution networks and in LV installations.

Figure 2 shows what was explained above.

Schematic diagram of a capacitor bank

Figure 2 – Schematic diagram of a capacitor bank

Capacitors may retain a charge long after power is removed from a circuit; this charge can cause dangerous or even potentially fatal shocks or damage connected equipment.

Capacitors banks may have built-in discharge resistors to dissipate stored energy to a safe level within a few seconds after power is removed.

Capacitors banks shall be stored with the terminals shorted, as protection from potentially dangerous voltages due to dielectric absorption[4].

HV capacitor banks are installed outdoors, surrounded by a fence, and LV capacitor banks are installed indoors, in metallic enclosures (switchboards).

In MV installations capacitor banks may be installed either outdoors, surrounded by a fence or in the pole of a MV overhead line, or indoors, in metallic enclosures (switchgears).

The fence must have a lock with a delayed opening to assure the time requested for the complete discharge of the capacitors.

Examples of capacitor banks are shown in figures 3 and 4.

HV Capacitor banks

Figure 3 – HV Capacitor bank

LV Capacitor banks

Figure 4 – LV Capacitor bank

TRANSIENT DISTURBANCES AND HARMONICS

During electrical switching of capacitor banks, transient disturbances (during a short time) occur in power systems that may damage key equipment, potentially having a great impact on system reliability.

An oscillation of the power system and electromagnetic pulses (EMP) can be provoked by that sudden change of a circuit.

One of those transient disturbances is overvoltage (known as “switching overvoltages”) that influences the required insulation level of the network and of the equipments.

During the switching of capacitor banks, high magnitude and high frequency transients can occur.

The impedance of a circuit dictates the current flow in that circuit.

As the supply impedance is generally considered to be inductive, the network impedance increases with frequency while the impedance of a capacitor decreases. This encourages a greater proportion of the currents circulating at frequencies above the fundamental supply frequency (50Hz or 60 Hz) to be absorbed by the capacitor, and all equipment associated with the capacitor.

In certain circumstances such currents can exceed the value of the fundamental (50Hz or 60 Hz) capacitor current. These currents in turn cause increased voltage to be applied across the dielectric of the capacitor. The harmonic voltage due to each harmonic current added arithmetically to the fundamental voltage dictates the voltage stress to be sustained by the capacitor dielectric and for which the capacitor must be designed, to avoid additional heating and higher dielectric stress.

Capacitors may catastrophically fail when subjected to voltages or currents beyond their rating, or as they reach their normal end of life. Dielectric or metal interconnection failures may create arcing that vaporizes the dielectric fluid, resulting in that case bulging, rupture, or even an explosion.

Capacitors units are intended to be operated at or below their rated voltage and frequency.

IEEE Std. 18-1992 and Std 1036-1992 specifies the standard ratings of the capacitors designed for shunt connection to ac systems and also provide application guidelines. These standards stipulate that:

  • Capacitor units should be capable of continuous operation up to 110% of rated terminal rms[5] voltage and a crest (peak) voltage not exceeding 2 x √2 of rated rms voltage, including harmonics but excluding transients. The capacitor should also be able to carry 135% of nominal current.
  • Capacitors units should not give less than 100% and more than 115% of rated reactive power at rated sinusoidal voltage and frequency.
  • Capacitor units should be suitable for continuous operation at up to 135% of rated reactive power caused by the combined effects of:
  • Voltage in excess of the nameplate rating at fundamental frequency, but not over 110% of rated rms voltage.
  • Harmonic voltages superimposed on the fundamental frequency: reactive power manufacturing tolerance of up to 115% of rated reactive power.

CAPACITOR BANKS CHARACTERISTICS AND APPLICATIONSIf harmonic problems exist, they most often manifest themselves first at shunt capacitor banks in the form of audible noise, blown fuses or capacitor unit failures.

As frequency varies, so reactance varies and a point can be reached when the capacitor reactance and the supply reactance are equal. This point is known as the circuit resonant frequency.

Whenever power factor correction is applied to a distribution network, bringing together capacitance and inductance, there will always be a frequency at which the capacitors are in parallel resonance with the supply.

If this condition occurs at, or close to, one of the harmonics generated by any solid state control equipment, then large harmonic currents can circulate between the supply network and the capacitor equipment, limited only by the damping resistance in the circuit. Such currents will add to the harmonic voltage disturbance in the network causing an increased voltage distortion.

This result in an unacceptably high voltage across the capacitor dielectric coupled with an excessive current through all the capacitor ancillary components. The most common order of harmonics is 5th, 7th, 11th and 13th but resonance can occur at any frequency.

Capacitors can be effectively applied in these types of environments by selecting compensation levels that do not tune the circuit or by the use of a filter.

POWER FACTOR CORRECTION

In electrical installations, namely in industry, exists several consumers, such as motors, that have an important inductive load that provokes a phase shift between voltage and current, as show on the figure below.

Phase shift

Figure 5 – Phase shift

Phase shift is represented as an angle (Ф) and current may be in advance or delayed of voltage.

If capacitance of the circuit prevails current is advanced; if inductance prevails current is delayed.

This phase shift provokes that “useful power” (active power – unit: W or kW) is lower than the power supplied (apparent power – unit: VA or kVA), the difference being the reactive power – unit: VAr or kVAr.

Representing those powers by vectors, the “power triangle” may be as shown on the figure below.

Power triangle

Figure 6 – Power triangle

The cosine of Ф (cos Ф) is the power factor, its value varies from 0 to 1 and the relations between the powers in the above triangle are:

P = S x cos Φ

Q = S x sen Φ

The consequences of a low power factor are:

  • Higher currents in cables.
  • Higher losses by Joule effect in the conductors.
  • Higher voltage drops

In most countries electricity distribution companies do not allow power factor to be lower than a defined value (in Europe it must be cos Ф ≥ 0.93 <> tg Ф ≤ 0.4) and impose penalties to clients that do not comply with this requirement.

When correcting power factor, clients avoid those penalties and in addition the reduction of losses can provide the utility with the additional benefit of reducing the apparent substation demand during peak loading conditions and the released system capacity can then be used to deliver more real power from the existing system, resulting in a more efficiently run power system.

Also the cross-section of the conductors can be reduced as advantage by improving the power factor.

When installing capacitor banks it is necessary to:

  • Calculate the bank size (the size of a capacitor bank is defined kVAr)
  • Determine the location for connection.
  • Select a control method.

To calculate the size of the capacitor bank (Q), the following equation must be used: You may also convert the capacitor bank kVAr and Farads as well.

Q [kVAr] = P [kW] x (tan Ф1 – tan Ф2)

P is the active power of the installation; Ф1 is the voltage and current phase shift of the installation; Ф2 is the desired voltage and current phase shift.

To define the location of the capacitor bank it must be taken into account that three methods are used for power factor correction, which depends of the location of the inductive loads and their requested reactive power:

  • Centralized correction: one capacitor bank is installed near the main incoming switchboard (see Figure 7).
  • De-centralized correction: capacitor banks are installed near distribution switchboards that supply energy to the main consumers responsible for the low power factor (see Figure 8).
  • Local correction: capacitor banks are installed near individual consumers (see Figure 9).

Centralized power factor correctionCentralized Power Factor (P.f) correction

De-centralized Power Factor correctionDe-centralized P.f correction

Local p.f (Power Factor) correctionFigure 9 – Local correction

For MV installations capacitor banks may be divided in steps and controlled by a VAr relay or an electronic controller, that monitors and switches steps or the whole capacitor bank based on real time network conditions what is shown in Figure 10, to avoid the supply of reactive power to the network, situation that is also subjected to penalties applied by the electricity distribution companies.VAr Relay for capacitor banks

Figure 10 – VAr relay

[1] IEC: International Electrotechnical Commission.

[2] IEEE: Institute of Electrical and Electronic Engineers (USA).

[3] HV: High Voltage (V ≥ 60 kV); MV: Medium Voltage (1 kV < V < 60 kV); LV: Low Voltage (V ≤ 1 kV).

[4] Dielectric absorption is the phenomenon by which a capacitor that has been charged for a long time does not discharges completely when submitted to a short discharge.

[5] rms: root mean square.

About the Author: Manuel Bolotinha

-Licentiate Degree in Electrical Engineering – Energy and Power Systems (1974 – Instituto Superior Técnico/University of Lisbon)
– Master Degree in Electrical and Computers Engineering (2017 – Faculdade de Ciências e Tecnologia/Nova University of Lisbon)
– Senior Consultant in Substations and Power Systems; Professional Instructor

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The post CAPACITOR BANKS – CHARACTERISTICS AND APPLICATIONS appeared first on Electrical Technology.



January 03, 2018 at 02:57AM by Department of EEE, ADBU: http://ift.tt/2AyIRVT

What is MEMS – Microelectromechanical Systems Technology ?

A Introduction to Microelectromechanical Systems (MEMS) Technology

Let us define MEMS!

MEMS stands for Micro-Electro-Mechanical System, an integrated system of mechanical and electro-mechanical devices and structures, manufactured using micro fabrication techniques. A MEMs device consists of 3 dimensional properties which sense and manipulate any physical or chemical property. Basic components using micro sensors, micro actuators and other micro structures, which are fabricated on a single silicon substrate. What is MEMS - Microelectromechanical Systems Technology ?

Like a typical mechatronics system, a MEMS device constitutes of a micro sensor to sense a particular variable of the environment and converts the variable to an electrical signal. This electrical signal is processed by microelectronics which accordingly controls a micro-actuator to produce the required change in environment.

What is MEMS constituted of?

Like said above, basic components of a MEMs device include micro-sensors and micro-actuators, which convert one form of energy to another. A MEMs device can have static or movable components, whose physical dimension varies from below one micron, to, above several millimetres. While a micro-sensor converts measured mechanical signal (i.e. physical or chemical parameter) to electrical signal, a micro-actuator does vice versa.

Different types of micro-sensors are available for almost every measurable parameter like temperature, pressure, smell, magnetic fields, radiation, speed, acceleration etc. It is noteworthy that for the past few years, performance of these micro-sensors have surpassed that of their macro scale versions along with other benefits like low production cost.

Different varieties of micro-actuators include micro-valves to control flow, optical switches and mirrors to control light beams, micro-resonators, micro-pumps to develop positive fluid pressure.

Ways of Fabrication of MEMS??

Fabrication of MEMs devices is done using conventional integrated circuit fabrication techniques like lithography, deposition, etching along with different micro-machining techniques. While the conventional techniques are used to obtain two dimensional structures, the micro-machining techniques enable extension to three-dimensional structure.

All MEMs or micro-fabrication device fabrication commences with growth of thin, flat material known as substrate, on which the whole structure is created. While crystalline silicon, owing to its low cost and high availability is the foremost choice for MEMs substrate, other materials like quartz, glass, ceramics, polymers are also used.Basic MEMS Process FlowPrior to micromachining, let us get a brief idea about the two basic processes.

1. Deposition: This involves deposition of thin film of materials on silicon substrate. Two varieties of deposition are as given below:

2. Chemical Deposition: This involves creation of solid materials from chemical reactions in gas and/or liquid compositions, either directly or with the substrate material. Types include Thermal Growth (Silicon Dioxide grown on Silicon at temperature range from 750 to 1200 degree Celsius.), Chemical Vapour Deposition (Solid material formed on the substrate as a result of chemical reaction between ambient gases), electro-deposition (formation of solid material by electrical conductivity) and Epitaxy.

3. Physical Deposition: This involves physically moving the substance to be deposited on the substrate. Types include Physical Vapour Deposition (Deposition of material by condensation of vapours of the source material) and Casting (Deposition of material dissolved in liquid solvent, by spraying or spinning).

4. Lithography: It involves formation of patterns on a chemically resistant polymer which is deposited on the substrate. These patterns are then transferred to the base or substrate layer accordingly.

Types include Photolithography (A transparent photomask coated with opaque pattern is placed in contact with the photo sensitive material deposited on the substrate, is exposed to radiation of a particular wavelength, causing either strengthening or weakening of the photoresist and transferring of the pattern to the organic layer), Double Sided Lithography and Gray Scale Lithography.Photolithography Process

Typical micromachining techniques include bulk micromachining, where structures are etched into the silicon substrate, and surface micromachining, where micro-mechanical layers are formed by deposition on the surface. Other techniques like silicon wafer bonding, LIGA and 3-D microfabrication are also used for high aspect ratio structures.

  1. Bulk Micromachining:

As the name suggests, it involves selective etching of bulk of silicon wafer to realize micro-mechanical structure. Etching can be Wet Etching or Dry Etching. Wet Etching involves etching of the material by dissolving it in a chemical etchant solution like HNA (Hydrofluoric acid, Nitric Acid and Acetic Acid), Potassium Hydroxide (KOH).It can be anisotropic etching (selective etching in specific direction) or isotropic etching (uniform etching in all directions).

Bulk Micromachined Structure

Dry Etching can be classified as Reactive Ion Etching (RIE) (where Radio Frequency (RF) energy is used to energise a plasma of reactive gases, to form ions which can cause either chemical or physical etching), Sputter Etching (where the material or Silicon wafer is subjected to ion bombardment) and Vapour Phase Etching (Silicon Wafer is placed in a chamber full of gases, wherein the deposited material is dissolved in a chemical reaction).

Commonly used technique for MEMS device is Deep Reactive Ion Etching (DRIE), modified Reactive Ion Etching technique where higher aspect ratios can be achieved by selective etching on the horizontal surface and not on the sidewalls.Anisotropic Etching of Silicon Wafer

  1. Surface Micromachining:

It involves using the substrate as a foundation block on which processing can be done. Thin film layers are added as structural layer (on which a free standing structure is made) and sacrificial layer (which is required for lithography and etching). Silicon Oxide is the commonly used sacrificial layer, whereas Polysilicon is the commonly used structural layer.

Surface Micromachining

3. High Aspect Ratio Micromachining:

It involves combing the micromachining with other techniques like injection moulding and electroplating. Commonly used technique is LIGA (Lithography, Electroforming and Moulding). Here, titanium, Copper or Aluminium layer is deposited on the substrate to form a patter and Nickel is coated over it to form the base plate.

High Aspect Ratio Micromachining

An X-Ray sensitive material like PMMA is then added to the substrate. The whole structure is subjected to X-Ray radiation where the exposed areas of PMMA are dissolved, thus electroforming the metal. The end products can be used as a final product or can be used as an injection tool.

Application Areas of MEMS Technology

1. Automotive Industry: Examples of MEMS devices include internal navigation sensors, airbag sensors, Air conditioning compressor sensors, fuel level and vapour pressure sensors etc.

2. Electronics Industry: Examples include inkjet printer heads, disk drive heads, earthquake sensors, mass data storage systems etc.

3. Medical Industry: Examples include Pacemakers, Prosthetics, Blood pressure sensors etc.

4. Defence: Examples are arming systems, munitions guidance, surveillance etc.

5. Communications: Examples are fibre optic components, voltage controlled oscillators, tuneable lasers, splitters and couplers etc.RF MEMS Switch

Future with MEMS!

While the simplest form of MEMS structure involves a single discrete micro-sensor, micro-actuator integrated with electronics, the practical applications require complex forms of MEMS devices which is possible by complex integration of MEMS with other techniques like Nanotechnology, Photonics etc.

Actually this vision of integration of all these technologies on a single chip is sought to be the most promising technological breakthrough in the future. Another form of integration which seems to be fruitful is integration with Biomedical science and optoelectronics.

It is noteworthy that from the past few years, highly innovative products have emerged from the integration of Biomedical science with MEMS, enabling revolutionary applications like DNA sequencing, water and environmental monitoring, drug discovery etc. Also integration of MEMS with optical communications have resulted in achieving practical means to curb ongoing network scaling issues.

Also in recent times, with evolution of Internet Over Things (IOT) market (smart devices), requirement of MEMS sensors has increased manifold. Also these smart systems cannot be just limited to Silicon based technologies, but rather Polymer based technologies.

So this is a brief yet significant information regarding MEMS, though there are many other things yet to be discussed, like the hiccups in this technology and of course some practical examples. Readers are invited to add in to these two points.

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January 02, 2018 at 11:21PM by Department of EEE, ADBU: http://ift.tt/2AyIRVT